Electrical devices with graphene on boron nitride

US9257509B2 · kind B2 · utility

Assignee

• The Trustees of Columbia University in the City of New York · US

Inventors

• Kenneth L. Shepard · Johnstown, US
• Philip Kim · Cambridge, US
• James Hone · New York, US
• Cory Dean · New York, US

Key dates

• Filing date: Dec 21, 2011
• Grant date: Feb 9, 2016
• Expiry date: Dec 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride.