Light-emitting diode chip

US9257596B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Martin Straβburg · Donaustauf, DE
• Enrique Calleja-Pardo · Madrid, ES
• Steven Albert · Madrid, ES
• Ana Maria Bengoechea Encabo · Madrid, ES
• Miguel Angel Sanchez-Garcia · Madrid, ES
• Martin Mandl · Lappersdorf, DE
• Christopher Kölper · Regensburg, DE

Key dates

• Filing date: Jan 15, 2013
• Grant date: Feb 9, 2016
• Expiry date: Jan 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light-emitting diode chip comprising:—a semiconductor body (1) having a plurality of active regions (2), wherein—at least one of the active regions (2) has at least two subregions (21 . . . 28),—the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21 . . . 28) of said at least two subregions (21 . . . 28),—the at least two subregions (21 . . . 28) emit light of mutually different colour during operation of the light-emitting diode chip,—in at least one of the subregions (21 . . . 28) the emission of light is generated electrically, and—the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21 . . . 28), is specified.