Radiation emitting or receiving optoelectronic semiconductor chip

US9257611B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Martin Mandl · Lappersdorf, DE
• Martin Strassburg · Tegernheim, DE
• Christopher Kölper · Regensburg, DE
• Alexander F. Pfeuffer · Regensburg, DE
• Patrick Rode · Regensburg, DE

Key dates

• Filing date: Nov 27, 2012
• Grant date: Feb 9, 2016
• Expiry date: Nov 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.