Photoelectric conversion element and imaging device
US9258463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Mar 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/103
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The solid-state imaging device includes lower electrodes acting as pixel electrodes, an organic photoelectric conversion film formed on the lower electrodes and generating electric charge in response to received light, and a transparent upper electrode that are formed on a substrate having signal readout circuits. The organic photoelectric conversion film, a transition area having at least one of its film thickness and film quality undergone transition from a film thickness and film quality of an area corresponding to a pixel electrode area in which the lower electrodes have been formed is an area that starts from an outer edge of the organic photoelectric conversion film and ends at a point away from the outer edge by a distance of 200 μm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.