Patent · US Active

High purity germanium detector

US9261610B2 · kind B2 · utility

1Cited by
3References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 18, 2014
Grant dateFeb 16, 2016
Priority date
Expiry dateDec 18, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01T1/366
  • WIPO fieldEnvironmental technology
  • WIPO sectorChemistry

Abstract

The present disclosure provides a High-Purity Germanium (HPGe) detector, comprising: a HPGe single crystal having an intrinsic region exposed surface; a first electrode and a second electrode connected to a first contact electrode and a second contact electrode of the HPGe single crystal respectively; and a conductive guard ring arranged in the intrinsic region exposed surface around the first electrode to separate the intrinsic region exposed surface into an inner region and an outer region. A leakage current derived from the intrinsic region exposed surface of the HPGe detector can be separated from the current of the HPGe detector by the conductive guard ring provided in the surface, thereby suppressing the interference of the surface leakage current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.