Methods of producing strain in a semiconductor waveguide and related devices
US9261647B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Dec 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/12011
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Quasi-phase matched (QPM), semiconductor photonic waveguides include periodically-poled alternating first and second sections. The first sections exhibit a high degree of optical coupling (abbreviated “X2”), while the second sections have a low X2. The alternating first and second sections may comprise high-strain and low-strain sections made of different material states (such as crystalline and amorphous material states) that exhibit high and low X2 properties when formed on a particular substrate, and/or strained corrugated sections of different widths. The QPM semiconductor waveguides may be implemented as silicon-on-insulator (SOI), or germanium-on-silicon structures compatible with standard CMOS processes, or as silicon-on-sapphire (SOS) structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.