Polymer compound, resin composition for photoresists, and method for producing semiconductor
US9261785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2013 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jun 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Provided is a polymer compound that has excellent sensitivity, high resolution, and small line edge roughness and is capable of forming a fine pattern precisely, and less causes post-develop defects.The polymer compound according to the present invention includes a monomer unit (a) and a monomer unit (b). The monomer unit (a) is represented by Formula (a), and the monomer unit (b) includes an alicyclic skeleton containing a polar group. The polar group of the monomer unit (b) is preferably at least one group selected from —O—, —C(═O)—, —C(═O)—O—, —O—C(═O)—O—, —C(═O)—O—C(═O)—, —C(═O)—NH—, —S(═O)—O—, —S(═O)2—O—, —ORa, —C(═O)—ORa, and —CN, where Ra represents, independently in each occurrence, optionally substituted alkyl.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.