Adusting flash memory operating parameters based on historical analysis of multiple indicators of degradation
US9262319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2015 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Feb 16, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7206
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method for increasing the operational lifetime of a flash memory device, wherein, the method comprises varying the operating parameters of the flash memory device over the lifetime of the flash memory device. The advantage of providing a method which varies the operating parameters of a flash memory device is that the operational lifetime of the flash memory device will be increased. Relatively low voltages and relatively short voltage periods may be used initially to write to, read from and erase the flash cells in the flash memory device. As time passes, the flash cells in the flash memory device will begin to degrade and it will be necessary to increase the voltage and the period of the voltage applied to the flash memory device in order to ensure that the correct write, read and/or erase commands are carried out. The invention is also directed towards a flash memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.