Pseudo-substrate for use in the production of semiconductor components and method for producing a pseudo-substrate

US9263248B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Arnulf Leuther · Bollschweil, DE
• Axel Tessmann · Gundelfingen, DE
• Rainer Losch · Bonn, DE

Key dates

• Filing date: Aug 10, 2011
• Grant date: Feb 16, 2016
• Expiry date: Mar 27, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/26
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A pseudo-substrate (1, 11) for use in the production of semiconductor components, having a carrier substrate (2, 12) with a crystalline structure and a first buffer (3, 13), which is arranged on a surface of the carrier substrate (2, 12), if appropriate on further intervening intermediate layers, wherein the first buffer (3, 13) is embodied as a single layer or as a multilayer system and includes, at least at the surface facing away from the carrier substrate (2, 12), arsenic (As) and at least one of the elements aluminum (Al) and indium (In). The invention is characterized in that a second buffer (4, 14) is additionally arranged on a side of the first buffer (3, 13) facing away from the carrier substrate (2, 12), if appropriate on further intervening intermediate layers, said second buffer being embodied as a single layer or as a multilayer system, wherein the second buffer (4, 14) is embodied such that it includes, at a first surface facing the first buffer (3, 13) arsenic and at least one of the elements aluminum and indium and comprises, at a second surface facing away from the first buffer (3, 13) antimony (Sb) and at least one of the elements aluminum and indium, and wherein …