Patent · US Active

Nanowires made of novel precursors and method for the production thereof

US9263262B2 · kind B2 · utility

1Cited by

2References

4Claims

0Family size

Assignee

Spawnt Private S.à.r.l. · LU

Inventors

Norbert Auner · Eutin, DE
Christian Bauch · Muldenstein, DE
Rumen Deltschew · Leipzig, DE
Sven Holl · Diez, DE
Javad Mohsseni · Bitterfeld-Wolfen, DE
Gerd Lippold · Leipzig, DE

Key dates

Filing date	May 5, 2011
Grant date	Feb 16, 2016
Priority date	—
Expiry date	Aug 19, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC01P2004/64
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.