Method for manufacturing semiconductor device
US9263273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2015 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Feb 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device may include the following steps: preparing a semiconductor substrate that includes a first substrate region, a second substrate region, and a third substrate region; providing a first mask that overlaps the semiconductor substrate; etching, using the first mask, the first semiconductor substrate to form a trench in each of the substrate regions; providing a second mask that overlaps the semiconductor substrate and includes three openings corresponding to the substrate regions; performing first ion implantation through the three openings to form a P-doped region in each of the substrate regions; performing second ion implantation through the three openings to form an N-doped region in each of the substrate regions; and performing third ion implantation through the three openings to form another N-doped region in each of the substrate regions; and forming an isolation member in each of the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.