Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin
US9263285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2011 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Dec 5, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio:A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.