High definition heater and method of operation
US9263305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.