Semiconductor device and manufacturing method thereof
US9263321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2013 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Sep 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacturing the semiconductor device are disclosed. The semiconductor device includes: a substrate including an active region and at least one groove isolation region formed on the substrate, wherein the at least one groove isolation region is formed adjoining the active region, a gate structure formed on a first portion of the active region, and at least one local interconnection layer formed on a portion of the substrate, wherein the at least one local interconnection layer is located on a side of the gate structure, and covers at least a second portion of the active region and a portion of the groove isolation region adjoining the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.