Semiconductor integrated circuit, programmable logic device, method of manufacturing semiconductor integrated circuit
US9263463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Sep 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/015
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor integrated circuit includes nonvolatile memory areas, each includes a first nonvolatile memory transistor, a second nonvolatile memory transistor and an output line, the first nonvolatile memory transistor includes a first source diffusion region, a first drain diffusion region and a first control gate electrode, the second nonvolatile memory transistor includes a second source diffusion region, a second drain diffusion region and a second control gate electrode, the output line connected the first drain diffusion region and the second drain diffusion region, and logic transistor areas, each includes a logic transistor, the logic transistor includes a third source diffusion region, a third drain diffusion region and a first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.