Semiconductor device, manufacturing method thereof, and display apparatus
US9263470B1 · kind B1 · utility
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17Claims
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Key dates
| Filing date | Dec 30, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.