Patent · US Active

CMOS image sensor

US9263494B2 · kind B2 · utility

1Cited by

0References

10Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Assim Boukhayma · Grenoble, FR
Arnaud Peizerat · Grenoble, FR

Key dates

Filing date	Jun 4, 2015
Grant date	Feb 16, 2016
Priority date	—
Expiry date	Jun 4, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/80373
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assembled as a source follower between the sense node and a read circuit, wherein the oxide thickness of the third transistor is smaller than that of the first and second transistors, the voltage difference between the first and second reference potentials is greater than the maximum voltage capable of being applied between two terminals of the third transistor, and the body or drain region of the third transistor is connected to a third reference potential in the range between the first and second potentials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.