Field effect transistor

US9263530B2 · kind B2 · utility

Assignees

• Epistar Corporation · TW
• Huga Optotech Inc. · TW

Inventors

• Chih-Ching Cheng · 埔鹽鄉, TW
• Tsung-Cheng Chang · Hsinchu, TW

Key dates

• Filing date: Dec 24, 2013
• Grant date: Feb 16, 2016
• Expiry date: Dec 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.