Metal oxide field effect transistors on a mechanically flexible polymer substrate having a die-lectric that can be processed from solution at low temperatures

US9263591B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Friederike Fleischhaker · Ludwigshafen, DE
• Veronika Wloka · Mannheim, DE
• Thomas Kaiser · Kelkheim, DE

Key dates

• Filing date: Dec 3, 2010
• Grant date: Feb 16, 2016
• Expiry date: Jan 18, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/0241
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to a method for producing an electronic component, in particular a field-effect transistor (FET), comprising at least one substrate, at least one dielectric, and at least one semiconducting metal oxide, wherein the dielectric or a precursor compound thereof based on organically modified silicon oxide compounds, in particular based on silsequioxanes and/or siloxanes, can be processed out of solution, and is thermally treated at a low temperature from room temperature to 350° C., and the semiconductive metal oxide, in particular ZnO or a precursor compound thereof, can also be processed from solution at a low temperature from room temperature to 350° C.