Semiconductor light-emitting device and method of forming electrode
US9263644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jun 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A semiconductor light-emitting device having an electrode that can be manufactured by a simple method and is unlikely to deteriorate, and a method for forming the electrode are provided. The semiconductor light-emitting device according to the present invention has a semiconductor layered structure having a light-emitting layer that emits light by supplying electric power and an electrode formed on the semiconductor layered structure. The electrode has a reflection layer that reflects light exiting from the light-emitting layer, a barrier layer formed on the upper side and side surface of the reflection layer, and a pad layer formed only on the top surface of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.