Temperature-compensated current monitoring
US9263877B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02J7/00304
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems, methods and media for current monitoring are provided herein. An exemplary method may include: receiving a temperature of a power MOSFET, the temperature being sensed by a temperature sensor; determining a resistance of the power MOSFET using the received temperature; receiving a voltage across the power MOSFET, the voltage being measured by a differential amplifier; calculating a current provided to an electrical load by the power MOSFET using the determined resistance of the power MOSFET and the received voltage; comparing the calculated current to a predetermined threshold; and switching the power MOSFET to an off state in response to the calculated current exceeding the predetermined threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.