Method for determining a mathematical model of the electric behavior of a PN junction diode, and corresponding device
US9268743B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 24, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Nov 11, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The electric behavior of a reverse-biased PN junction diode is modeled by measuring the value of voltage V present across the diode and the value of the corresponding current I running through this diode, the voltage V varying within a range of values including the value of diode breakdown voltage. A representation of a functionaccording to voltage V is established from the measured values of current I and of voltage V, IS being the saturation current of the diode. A linear function representative of a substantially linear portion of the function, characterized by voltages V greater than breakdown voltage VBK in terms of absolute value, is determined. An avalanche multiplication factor MM is then calculated bywith parameter slbv equal to the ordinate at the origin of the linear function, and parameter slbv/bv equal to the slope of the linear function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.