Patent · US Active

Integrated circuit device methods and models with predicted device metric variations

US9268885B1 · kind B1 · utility

2Cited by
414References
12Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 28, 2013
Grant dateFeb 23, 2016
Priority date
Expiry dateJul 22, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F30/367
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method can include selecting integrated circuit (IC) device fabrication process source variations; generating relationships between each process source variance and a device metric variance; and calculating at least one IC device metric value from the process source variations and corresponding relationships between each process source variance and a device metric variance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.