Generating read thresholds using gradient descent and without side information
US9269449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first bit position of a cell in solid state storage is read where a sorting bit is obtained using the read of the first bit position. A second bit position of the cell is read for a first time, including by setting a first read threshold associated with the second bit position to a first value and setting a second read threshold associated with the second bit position to a second value. The second bit position of the cell is read for a second time, including by setting the first read threshold to a third value and setting the second read threshold to a fourth value. A new value for the first read threshold and for the second read threshold is generated using the sorting bit, the first read, and the second read.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.