Flat panel image sensor and method of manufacturing thereof
US9269737B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Oct 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/122
Abstract
A flat panel image sensor includes a thin film transistor (TFT) and diode array, a conformal insulating layer on a top surface of the TFT and diode array, a planarized dielectric layer on a top surface of the conformal insulating layer, a first metalized via in the planarized dielectric layer and the conformal insulating layer to contact a metalized portion of the TFT and diode array, a second metalized via in the planarized dielectric layer and the conformal insulation layer to contact a diode portion of the TFT and diode array, and a passivation layer over the first and second vias and an upper surface of the planarized dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.