Semiconductor device
US9269782B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2012 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/4903
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.