High-electron-mobility transistor
US9269790B2 · kind B2 · utility
12Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Jan 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.