Amorphous oxide and thin film transistor
US9269826B2 · kind B2 · utility
28Cited by
17References
1Claims
0Family size
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Key dates
| Filing date | Jan 5, 2011 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Jan 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.