CIS-based thin film solar cell
US9269841B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2011 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Jul 21, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.