Method and apparatus for forming copper(Cu) or antimony(Sb) doped zinc telluride and cadmium zinc telluride layers in a photovoltaic device
US9269850B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Dec 23, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.