Semiconductor light-emitting diode and method for manufacturing the same

US9269852B2 · kind B2 · utility

Assignee

• HC SEMITEK CORPORATION · CN

Inventors

• Wenbing Li · Singapore, SG
• Jiangbo Wang · Beijing, CN
• Binzhong DONG · 安丰镇, CN
• Chunyan Yang · Xiamen, CN

Key dates

• Filing date: Sep 6, 2014
• Grant date: Feb 23, 2016
• Expiry date: Sep 6, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component.