Method for manufacturing high efficiency light-emitting diodes
US9269855B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 4, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Dec 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.