Nanostructure semiconductor light emitting device
US9269865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.