Method of manufacturing semiconductor device substrate with crystal structure reformation regions
US9275903B2 · kind B2 · utility
1Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | Sep 17, 2014 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Sep 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device include preparing an initial substrate including an edge region and a central region in which circuit patterns are formed, forming a reforming region in the edge region of the initial substrate, grinding the initial substrate to form a substrate, and cutting the substrate to form a semiconductor chip including each of the circuit patterns. A crystal structure of the reforming region is different from that of the initial substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.