Majority- and minority-gate logic schemes based on magneto-electric devices

US9276040B1 · kind B1 · utility

Assignees

• BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA · US
• The Board of Regents of the University of Texas System · US
• The Research Foundation for The State University of New York · US

Inventors

• Andrew Marshall · Grand Valley, CA
• Peter A. Dowben · Crete, US
• Jonathan P. Bird · Buffalo, US

Key dates

• Filing date: Jan 16, 2015
• Grant date: Mar 1, 2016
• Expiry date: Jan 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N59/00
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

Majority and minority logic can be implemented by voltage controlled switching of magneto-electric layers of magneto electric magnetic tunnel junction (ME-MTJ) devices. A ME-MTJ device includes an exchange bias-controlled switching element and a pinned ferromagnetic layer on an antiferromagnetic layer. In one case, the switching element includes a magneto electric (ME) layer on a free ferromagnetic (FM) layer, and is separated from the pinned FM layer by an insulator. To implement a majority or minority logic gate a single ME-MTJ device may be used where the device is provided with three electrodes contacting the ME layer in an overlaying relationship with the ME layer. The orientation of the pinned FM layer indicates whether the gate is a majority or a minority logic gate.