Oxide semiconductor target and oxide semiconductor material, as well as semiconductor device using the same
US9276123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2013 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Aug 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ΔVth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.