Nonvolatile memory device and method for fabricating the same
US9276132B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Aug 19, 2013 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A nonvolatile memory device includes an insulating pattern extending in a first direction, a conductive pattern on the insulating pattern, and an electrode structure extending in the first direction. The electrode structure is adjacent the insulating pattern and conductive pattern, and includes an alternating pattern of gate electrodes and interlayer insulating films. A protection film adjacent a side surface of the electrode structure has a shorter length in the first direction than a length of the electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.