Patent · US Active

Methods for forming a transparent oxide layer for a photovoltaic device

US9276142B2 · kind B2 · utility

1Cited by
10References
29Claims
0Family size

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Key dates

Filing dateNov 29, 2011
Grant dateMar 1, 2016
Priority date
Expiry dateFeb 27, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.