Patent · US Active

Infrared sensor device and method for producing an infrared sensor device

US9276146B2 · kind B2 · utility

0Cited by

1References

16Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Ingo Herrmann · Friolzheim, DE
Christoph Schelling · Stuttgart, DE

Key dates

Filing date	Apr 12, 2013
Grant date	Mar 1, 2016
Priority date	—
Expiry date	Apr 12, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An infrared sensor device includes at least one sensor element formed in a semiconductor substrate, an SOI wafer that defines a gap below and around the sensor element, and a suspension device that is configured to suspend the sensor element in the SOI wafer. The sensor element is substantially arranged below the suspension device, thereby achieving a high sensitivity, low thermal capacity, low thermal coupling to the substrate and a high image refresh rate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.