Method for manufacturing silicon-based solar cell
US9276163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2011 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Oct 14, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.