Optoelectronic device and method for manufacturing the same

US9276164B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Tzu-Chieh Hsu · Hsinchu, TW
• Ching-Pei Lin · Austin, US
• Yen-Ming Hsu · Lexington, US
• Shou-Chin Wei · Hsinchu, TW

Key dates

• Filing date: Nov 26, 2012
• Grant date: Mar 1, 2016
• Expiry date: Nov 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882

Abstract

A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile.