Patent · US Active

Method for producing semiconductor optical device and semiconductor optical device

US9280030B2 · kind B2 · utility

1Cited by
25References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 11, 2014
Grant dateMar 8, 2016
Priority date
Expiry dateJul 11, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F1/212
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for producing a semiconductor optical device includes the steps of forming first and second optical waveguides; forming a first resin layer on the first and the second optical waveguides; forming an opening in the first resin layer; forming a first electrode in the opening; forming a second resin layer on the first electrode and the first resin layer; forming a groove in the second resin layer on the first electrode; forming a second electrode on the second resin layer, a side surface of the groove, and the top surface of the first electrode; and forming a third electrode on the second electrode. The second and third electrodes have a region in which the second and third electrodes pass over the second optical waveguide, and, in the region, the first and second resin layers are disposed between the second electrode and the second optical waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.