Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge

US9281183B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Xiang Liu · Lompoc, US
• Umesh Mishra · Montecito, US
• Stacia Keller · Midland School, US
• Jeonghee Kim · Goleta, US
• Matthew A. Laurent · Rancho Palos Verdes, US
• Jing Lu · Goleta, US
• Ramya Yeluri · Lompoc, US
• Silvia H. Chan · Lompoc, US

Key dates

• Filing date: Jan 15, 2015
• Grant date: Mar 8, 2016
• Expiry date: Jan 15, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.