Solution processible hardmasks for high resolution lithography
US9281207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Jan 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and/or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and/or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.