Transistor device structure

US9281305B1 · kind B1 · utility

Assignee

• National Applied Research Laboratories · TW

Inventors

• Chih-Chao Yang · Glenmont, US
• Jia-Min Shieh · Hsinchu, TW
• Wen-Hsien Huang · Hsinchu, TW
• Tung-Ying Hsieh · 林湖乡, CN
• Chang-Hong Shen · Hsinchu, TW
• Szu-Hung Chen · Taipei, TW

Key dates

• Filing date: Dec 5, 2014
• Grant date: Mar 8, 2016
• Expiry date: Dec 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6741

Abstract

A transistor device structure includes a substrate, a first transistor layer and a second transistor layer. The second transistor layer is disposed between the substrate and the first transistor layer. The first transistor layer includes an insulating structure and a first transistor unit. The insulating structure is disposed on the second transistor layer and has a protruding portion. The first transistor unit includes a gate structure, a source/drain structure, an embedded source/drain structure and a channel. The source/drain structure is disposed beside the gate structure and over the insulating structure. The embedded source/drain structure is disposed underneath the source/drain structure and in the insulating structure. The channel is defined between the protruding portion and the gate structure.