Integrated circuit resistor
US9281356B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2014 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes providing a substrate including an isolation region, forming a resistor over the isolation region, and forming a contact over the resistor. The method also includes implanting with a dopant concentration that is step-increased at a depth of the resistor and that remains substantially constant as depth increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.