Infra red detectors and a method of manufacturing infra red detectors using MOVPE
US9281434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2010 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Nov 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/123
Abstract
A method of forming infra red detector arrays is described, starting with the manufacture of a wafer. The wafer is formed from a GaAs or GaAs/Si substrate having CMT deposited thereon by MOVPE. The CMT deposited can include a number of layers of differing composition, the composition being controlled during the MOVPE process and being dependent on the thickness of the layer deposited. A CdTe buffer layer can aid deposition of the CMT on the substrate. Once the wafer is formed, the buffer layer, an etch stop layer and any intervening layers can be etched away leaving a wafer suitable for further processing into an infra red detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.