Ridge laser

US9281656B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Jens Mueller · Stuttgart, DE
• Adrian Stefan Avramescu · Regensburg, DE

Key dates

• Filing date: Jun 3, 2013
• Grant date: Mar 8, 2016
• Expiry date: Jun 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/176
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In at least one embodiment, the bar laser (1) has a semiconductor layer sequence (2) with an active zone (20). A waveguide (3) with a defined width (B) is formed as an elevation from the semiconductor layer sequence (2). A contact metallization (4) is applied to an upper side (30) of the waveguide (3) facing away from the active zone (20). A current flow layer (5) is in direct contact with the contact metallization (4). The contact metallization (4) is electrically connected via the current flow layer (5). A current flow width (C) of the active zone (20) and/or the waveguide (3) is less than the width (B) of the waveguide (3).