Electrode, electrode material, and electrode formation method
US9282638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Jul 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a low-resistance, high-reliability through/embedded electrode is provided, where the electrode can be arranged in a higher density according to the miniaturization of the semiconductor manufacturing technology. This method includes the step of filling an opening 51 of a substrate 50 with a paste 56 of a first conductive material and drying the paste 56; the step of solid-phase sintering the paste 56 filled in the opening 51, generating a first porous conductor 57; the step of applying a paste of a second conductive material so as to cover the first conductor 57; and the step of melting the paste of the second conductive material by heat treatment, impregnating the second conductive material into the first conductor 57.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.