Semiconductor device and method of manufacturing the same
US9284186B2 · kind B2 · utility
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3References
8Claims
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Key dates
| Filing date | Sep 24, 2012 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Sep 7, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00182
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.